TECHNOLOGY PLATFORMS
Lawrence Semiconductor supports advanced semiconductor technology platforms where epitaxial materials, process control, and manufacturing discipline are critical to performance and scalability.
- Silicon Photonics, Optoelectronics, and Infrared Sensing
- MEMS and Advanced Sensor Platforms
- Advanced Logic, Analog, and Power Devices
- Quantum Technologies
Silicon Photonics
- Selective Ge for SWIR photodetectors and waveguides
- Tensile strained Ge for extended cut-off wavelength photodetectors to shift from C to L band at 1.6um
- SiGeSn for enhanced mobility hypercomputing, SWIR to MWIR (1.7-4um) photodetectors, LED and Lasers
- Quantum Confinement Stark Effect (QCSE) with SiGe/Ge Multi Quantum Well structures for optical modulators
Si-based Power Devices
- Thick n-type doped Si drift layers for power devices
- Thick PIN diodes for high power applications up to thousands of Volts
- Carbon-Doped Si:B and Si:P to reduce dopant diffusion in PIN structures
MEMS Sensors
- Poly silicon trench fill for through silicon vias (TSV)
- Thick epi-poly for MEMS applications
- Si:Ge:B stress tuning films for low bow low strain MEMS membranes
Quantum Computing
- Si Electron Spin Qubit channel in Si/SiGe Quantum Well FET structure
- Ge Hole Spin Qubit in Ge/SiGe QW FET structure
- High Purity Silicon-28 Epi services; available as a blanket Epi layer or as part of a Quantum Well FET structure
Virtual Substrates
- Thick graded buffer virtual substrate (TGB-VS)
- Thin constant composition virtual substrate (TCC-VS)
- Reverse graded buffer layer virtual substrate (RGB-VS)
CMOS Logic & RF
- Phosphorus doped Si for NMOS S/D stressor for enhanced mobility of n transistor channel
- Boron doped SiGe S/D stressor for enhanced mobility of p transistor channel
- Ge FETs on non-(100) substrates for high mobility FET channel
- Silicon on sapphire (SOS) for RF CMOS ICs and optoelectronics
Specialized Detectors
- Homoepitaxial Ge diodes for hard x-ray detectors
- Pure Boron on Si for EUV and VUV detectors
